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Diffstat (limited to '')
| -rw-r--r-- | plat/marvell/armada/a8k/a70x0_mochabin/board/dram_port.c | 227 |
1 files changed, 227 insertions, 0 deletions
diff --git a/plat/marvell/armada/a8k/a70x0_mochabin/board/dram_port.c b/plat/marvell/armada/a8k/a70x0_mochabin/board/dram_port.c new file mode 100644 index 0000000..68d335b --- /dev/null +++ b/plat/marvell/armada/a8k/a70x0_mochabin/board/dram_port.c @@ -0,0 +1,227 @@ +/* + * Copyright (C) 2021 Sartura Ltd. + * Copyright (C) 2021 Globalscale technologies, Inc. + * Copyright (C) 2021 Marvell International Ltd. + * + * SPDX-License-Identifier: BSD-3-Clause + * https://spdx.org/licenses + */ + +#include <arch_helpers.h> +#include <common/debug.h> + +#include <mv_ddr_if.h> +#include <plat_marvell.h> + +/* + * This function may modify the default DRAM parameters + * based on information received from SPD or bootloader + * configuration located on non volatile storage + */ +void plat_marvell_dram_update_topology(void) +{ +} + +/* + * This struct provides the DRAM training code with + * the appropriate board DRAM configuration + */ +#if DDR_TOPOLOGY == 0 +static struct mv_ddr_topology_map board_topology_map_2g = { +/* 1CS 4Gb x4 devices of Samsung K4A4G085WF */ + DEBUG_LEVEL_ERROR, + 0x1, /* active interfaces */ + /* cs_mask, mirror, dqs_swap, ck_swap X subphys */ + { { { {0x1, 0x2, 0, 0}, + {0x1, 0x2, 0, 0}, + {0x1, 0x2, 0, 0}, + {0x1, 0x2, 0, 0}, + {0x1, 0x2, 0, 0}, + {0x1, 0x2, 0, 0}, + {0x1, 0x2, 0, 0}, + {0x1, 0x2, 0, 0}, + {0x1, 0x2, 0, 0} }, + SPEED_BIN_DDR_2400R, /* speed_bin */ + MV_DDR_DEV_WIDTH_8BIT, /* sdram device width */ + MV_DDR_DIE_CAP_4GBIT, /* die capacity */ + MV_DDR_FREQ_SAR, /* frequency */ + 0, 0, /* cas_l, cas_wl */ + MV_DDR_TEMP_LOW} }, /* temperature */ + BUS_MASK_32BIT, /* subphys mask */ + MV_DDR_CFG_DEFAULT, /* ddr configuration data source */ + NOT_COMBINED, /* ddr twin-die combined*/ + { {0} }, /* raw spd data */ + {0}, /* timing parameters */ + { /* electrical configuration */ + { /* memory electrical configuration */ + MV_DDR_RTT_NOM_PARK_RZQ_DISABLE, /* rtt_nom */ + { + MV_DDR_RTT_NOM_PARK_RZQ_DIV4, /* rtt_park 1cs */ + MV_DDR_RTT_NOM_PARK_RZQ_DIV1 /* rtt_park 2cs */ + }, + { + MV_DDR_RTT_WR_DYN_ODT_OFF, /* rtt_wr 1cs */ + MV_DDR_RTT_WR_RZQ_DIV2 /* rtt_wr 2cs */ + }, + MV_DDR_DIC_RZQ_DIV7 /* dic */ + }, + { /* phy electrical configuration */ + MV_DDR_OHM_30, /* data_drv_p */ + MV_DDR_OHM_30, /* data_drv_n */ + MV_DDR_OHM_30, /* ctrl_drv_p */ + MV_DDR_OHM_30, /* ctrl_drv_n */ + { + MV_DDR_OHM_60, /* odt_p 1cs */ + MV_DDR_OHM_120 /* odt_p 2cs */ + }, + { + MV_DDR_OHM_60, /* odt_n 1cs */ + MV_DDR_OHM_120 /* odt_n 2cs */ + }, + }, + { /* mac electrical configuration */ + MV_DDR_ODT_CFG_NORMAL, /* odtcfg_pattern */ + MV_DDR_ODT_CFG_ALWAYS_ON, /* odtcfg_write */ + MV_DDR_ODT_CFG_NORMAL, /* odtcfg_read */ + }, + } +}; +#endif + +#if DDR_TOPOLOGY == 1 +static struct mv_ddr_topology_map board_topology_map_4g = { +/* 1CS 8Gb x4 devices of Samsung K4A8G085WC-BCTD */ + DEBUG_LEVEL_ERROR, + 0x1, /* active interfaces */ + /* cs_mask, mirror, dqs_swap, ck_swap X subphys */ + { { { {0x1, 0x2, 0, 0}, + {0x1, 0x2, 0, 0}, + {0x1, 0x2, 0, 0}, + {0x1, 0x2, 0, 0}, + {0x1, 0x2, 0, 0}, + {0x1, 0x2, 0, 0}, + {0x1, 0x2, 0, 0}, + {0x1, 0x2, 0, 0}, + {0x1, 0x2, 0, 0} }, + SPEED_BIN_DDR_2400R, /* speed_bin */ + MV_DDR_DEV_WIDTH_8BIT, /* sdram device width */ + MV_DDR_DIE_CAP_8GBIT, /* die capacity */ + MV_DDR_FREQ_SAR, /* frequency */ + 0, 0, /* cas_l, cas_wl */ + MV_DDR_TEMP_LOW} }, /* temperature */ + BUS_MASK_32BIT, /* subphys mask */ + MV_DDR_CFG_DEFAULT, /* ddr configuration data source */ + NOT_COMBINED, /* ddr twin-die combined*/ + { {0} }, /* raw spd data */ + {0}, /* timing parameters */ + { /* electrical configuration */ + { /* memory electrical configuration */ + MV_DDR_RTT_NOM_PARK_RZQ_DISABLE, /* rtt_nom */ + { + MV_DDR_RTT_NOM_PARK_RZQ_DIV4, /* rtt_park 1cs */ + MV_DDR_RTT_NOM_PARK_RZQ_DIV1 /* rtt_park 2cs */ + }, + { + MV_DDR_RTT_WR_DYN_ODT_OFF, /* rtt_wr 1cs */ + MV_DDR_RTT_WR_RZQ_DIV2 /* rtt_wr 2cs */ + }, + MV_DDR_DIC_RZQ_DIV7 /* dic */ + }, + { /* phy electrical configuration */ + MV_DDR_OHM_30, /* data_drv_p */ + MV_DDR_OHM_30, /* data_drv_n */ + MV_DDR_OHM_30, /* ctrl_drv_p */ + MV_DDR_OHM_30, /* ctrl_drv_n */ + { + MV_DDR_OHM_60, /* odt_p 1cs */ + MV_DDR_OHM_120 /* odt_p 2cs */ + }, + { + MV_DDR_OHM_60, /* odt_n 1cs */ + MV_DDR_OHM_120 /* odt_n 2cs */ + }, + }, + { /* mac electrical configuration */ + MV_DDR_ODT_CFG_NORMAL, /* odtcfg_pattern */ + MV_DDR_ODT_CFG_ALWAYS_ON, /* odtcfg_write */ + MV_DDR_ODT_CFG_NORMAL, /* odtcfg_read */ + }, + } +}; +#endif + +#if DDR_TOPOLOGY == 2 +static struct mv_ddr_topology_map board_topology_map_8g = { +/* 2CS 8Gb x8 devices of Micron MT40A1G8WE-083E IT */ + DEBUG_LEVEL_ERROR, + 0x1, /* active interfaces */ + /* cs_mask, mirror, dqs_swap, ck_swap X subphys */ + { { { {0x3, 0x2, 0, 0}, + {0x3, 0x2, 0, 0}, + {0x3, 0x2, 0, 0}, + {0x3, 0x2, 0, 0}, + {0x3, 0x2, 0, 0}, + {0x3, 0x2, 0, 0}, + {0x3, 0x2, 0, 0}, + {0x3, 0x2, 0, 0}, + {0x3, 0x2, 0, 0} }, + SPEED_BIN_DDR_2400R, /* speed_bin */ + MV_DDR_DEV_WIDTH_8BIT, /* sdram device width */ + MV_DDR_DIE_CAP_8GBIT, /* die capacity */ + MV_DDR_FREQ_SAR, /* frequency */ + 0, 0, /* cas_l, cas_wl */ + MV_DDR_TEMP_LOW} }, /* temperature */ + BUS_MASK_32BIT, /* subphys mask */ + MV_DDR_CFG_DEFAULT, /* ddr configuration data source */ + NOT_COMBINED, /* ddr twin-die combined*/ + { {0} }, /* raw spd data */ + {0}, /* timing parameters */ + { /* electrical configuration */ + { /* memory electrical configuration */ + MV_DDR_RTT_NOM_PARK_RZQ_DISABLE, /* rtt_nom */ + { + MV_DDR_RTT_NOM_PARK_RZQ_DIV4, /* rtt_park 1cs */ + MV_DDR_RTT_NOM_PARK_RZQ_DIV1 /* rtt_park 2cs */ + }, + { + MV_DDR_RTT_WR_DYN_ODT_OFF, /* rtt_wr 1cs */ + MV_DDR_RTT_WR_RZQ_DIV2 /* rtt_wr 2cs */ + }, + MV_DDR_DIC_RZQ_DIV7 /* dic */ + }, + { /* phy electrical configuration */ + MV_DDR_OHM_30, /* data_drv_p */ + MV_DDR_OHM_30, /* data_drv_n */ + MV_DDR_OHM_30, /* ctrl_drv_p */ + MV_DDR_OHM_30, /* ctrl_drv_n */ + { + MV_DDR_OHM_60, /* odt_p 1cs */ + MV_DDR_OHM_120 /* odt_p 2cs */ + }, + { + MV_DDR_OHM_60, /* odt_n 1cs */ + MV_DDR_OHM_120 /* odt_n 2cs */ + }, + }, + { /* mac electrical configuration */ + MV_DDR_ODT_CFG_NORMAL, /* odtcfg_pattern */ + MV_DDR_ODT_CFG_ALWAYS_ON, /* odtcfg_write */ + MV_DDR_ODT_CFG_NORMAL, /* odtcfg_read */ + }, + } +}; +#endif + +struct mv_ddr_topology_map *mv_ddr_topology_map_get(void) +{ +/* a70x0_mochabin board supports 3 DDR4 models (2G/1CS, 4G/1CS, 8G/2CS) */ +#if DDR_TOPOLOGY == 0 + return &board_topology_map_2g; +#elif DDR_TOPOLOGY == 1 + return &board_topology_map_4g; +#elif DDR_TOPOLOGY == 2 + return &board_topology_map_8g; +#else + #error "Unknown DDR topology" +#endif +} |